% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Dazlvarez:255938,
      author       = {Díaz Álvarez, Adrian and Xu, Tao and Tütüncüoglu,
                      Gözde and Demonchaux, Thomas and Nys, Jean-Philippe and
                      Berthe, Maxime and Matteini, Federico and Potts, Heidi A.
                      and Troadec, David and Patriarche, Gilles and Lampin,
                      Jean-François and Coinon, Christophe and Fontcuberta i
                      Morral, Anna and Dunin-Borkowski, Rafal and Ebert, Philipp
                      and Grandidier, Bruno},
      title        = {{N}onstoichiometric {L}ow-{T}emperature {G}rown {G}a{A}s
                      {N}anowires},
      journal      = {Nano letters},
      volume       = {15},
      number       = {10},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2015-06017},
      pages        = {6440–6445},
      year         = {2015},
      abstract     = {The structural and electronic properties of
                      nonstoichiometric low-temperature grown GaAs nanowire shells
                      have been investigated with scanning tunneling microscopy
                      and spectroscopy, pump–probe reflectivity, and
                      cathodoluminescence measurements. The growth of
                      nonstoichiometric GaAs shells is achieved through the
                      formation of As antisite defects, and to a lower extent,
                      after annealing, As precipitates. Because of the high
                      density of atomic steps on the nanowire sidewalls, the Fermi
                      level is pinned midgap, causing the ionization of the
                      subsurface antisites and the formation of depleted regions
                      around the As precipitates. Controlling their incorporation
                      offers a way to obtain unique electronic and optical
                      properties that depart from the ones found in conventional
                      GaAs nanowires.},
      cin          = {PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363003100023},
      doi          = {10.1021/acs.nanolett.5b01802},
      url          = {https://juser.fz-juelich.de/record/255938},
}