TY  - JOUR
AU  - Dais, C.
AU  - Mussler, G.
AU  - Fromherz, T.
AU  - Müller, E.
AU  - Solak, H. H.
AU  - Grützmacher, D.
TI  - SiGe quantum dot crystals with periods down to 35 nm
JO  - Nanotechnology
VL  - 26
IS  - 25
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2015-06109
SP  - 255302 -
PY  - 2015
AB  - By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000356137400008
DO  - DOI:10.1088/0957-4484/26/25/255302
UR  - https://juser.fz-juelich.de/record/256089
ER  -