Journal Article

FZJ-2015-06109

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png SiGe quantum dot crystals with periods down to 35 nm

Dais, C. (Corresponding author) ; Mussler, G.FZJ* ; Fromherz, T. ; Müller, E. ; Solak, H. H. ; Grützmacher, D.FZJ*

2015
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: doi:10.1088/0957-4484/26/25/255302

Abstract: By combining extreme ultraviolet interference lithography with Si/Ge molecular beam epitaxy, densely packed quantum dot (QD) arrays with lateral periodicities down to 35 nm are realized. The QD arrays are featured by perfect alignment and remarkably narrow size distribution. Also, such small periodicities allow the creation of three-dimensional QD crystals by vertical stacking of Si/Ge layers using very thin Si spacer layers. Simulations show that the distances between adjacent QDs are small enough for coupling of the electron states in lateral as well as vertical directions.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

---

Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; National-Konsortium ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---