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@ARTICLE{Dais:256089,
author = {Dais, C. and Mussler, G. and Fromherz, T. and Müller, E.
and Solak, H. H. and Grützmacher, D.},
title = {{S}i{G}e quantum dot crystals with periods down to 35 nm},
journal = {Nanotechnology},
volume = {26},
number = {25},
issn = {1361-6528},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2015-06109},
pages = {255302 -},
year = {2015},
abstract = {By combining extreme ultraviolet interference lithography
with Si/Ge molecular beam epitaxy, densely packed quantum
dot (QD) arrays with lateral periodicities down to 35 nm are
realized. The QD arrays are featured by perfect alignment
and remarkably narrow size distribution. Also, such small
periodicities allow the creation of three-dimensional QD
crystals by vertical stacking of Si/Ge layers using very
thin Si spacer layers. Simulations show that the distances
between adjacent QDs are small enough for coupling of the
electron states in lateral as well as vertical directions.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000356137400008},
doi = {10.1088/0957-4484/26/25/255302},
url = {https://juser.fz-juelich.de/record/256089},
}