000025913 001__ 25913
000025913 005__ 20180210140724.0
000025913 0247_ $$2WOS$$aWOS:000173066800022
000025913 037__ $$aPreJuSER-25913
000025913 041__ $$aeng
000025913 082__ $$a620
000025913 084__ $$2WoS$$aEngineering, Electrical & Electronic
000025913 084__ $$2WoS$$aPhysics, Applied
000025913 084__ $$2WoS$$aPhysics, Condensed Matter
000025913 1001_ $$0P:(DE-HGF)0$$aBachhofer, H.$$b0
000025913 245__ $$aInterfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films
000025913 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2002
000025913 300__ $$a289
000025913 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000025913 3367_ $$2DataCite$$aOutput Types/Journal article
000025913 3367_ $$00$$2EndNote$$aJournal Article
000025913 3367_ $$2BibTeX$$aARTICLE
000025913 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000025913 3367_ $$2DRIVER$$aarticle
000025913 440_0 $$02659$$aIntegrated Ferroelectrics$$v39$$x1058-4587
000025913 500__ $$aRecord converted from VDB: 12.11.2012
000025913 520__ $$aStrontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.
000025913 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik$$cI01$$x0
000025913 588__ $$aDataset connected to Web of Science
000025913 650_7 $$2WoSType$$aJ
000025913 65320 $$2Author$$aferroelectrics
000025913 65320 $$2Author$$aSBT
000025913 65320 $$2Author$$ainterfacial layer
000025913 65320 $$2Author$$aleakage current
000025913 7001_ $$0P:(DE-HGF)0$$aReisinger, H.$$b1
000025913 7001_ $$0P:(DE-HGF)0$$aSteinlesberger, G.$$b2
000025913 7001_ $$0P:(DE-HGF)0$$aNagel, W. E.$$b3
000025913 7001_ $$0P:(DE-HGF)0$$aCerva, H.$$b4
000025913 7001_ $$0P:(DE-HGF)0$$avon Philipsborn, H.$$b5
000025913 7001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b6$$uFZJ
000025913 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b7$$uFZJ
000025913 773__ $$0PERI:(DE-600)2037916-X$$gVol. 39, p. 289$$p289$$q39<289$$tIntegrated ferroelectrics$$v39$$x1058-4587$$y2002
000025913 909CO $$ooai:juser.fz-juelich.de:25913$$pVDB
000025913 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik$$x0
000025913 9141_ $$y2002
000025913 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000025913 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
000025913 970__ $$aVDB:(DE-Juel1)17299
000025913 980__ $$aVDB
000025913 980__ $$aConvertedRecord
000025913 980__ $$ajournal
000025913 980__ $$aI:(DE-Juel1)PGI-7-20110106
000025913 980__ $$aUNRESTRICTED
000025913 981__ $$aI:(DE-Juel1)PGI-7-20110106