Journal Article

PreJuSER-25913

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films

Bachhofer, H. ; Reisinger, H. ; Steinlesberger, G. ; Nagel, W. E. ; Cerva, H. ; von Philipsborn, H. ; Schroeder, H.FZJ* ; Waser, R.FZJ*

2002
Taylor & Francis London [u.a.]

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Abstract: Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.

Keyword(s): J ; ferroelectrics (auto) ; SBT (auto) ; interfacial layer (auto) ; leakage current (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002

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