TY  - JOUR
AU  - Bachhofer, H.
AU  - Reisinger, H.
AU  - Steinlesberger, G.
AU  - Nagel, W. E.
AU  - Cerva, H.
AU  - von Philipsborn, H.
AU  - Schroeder, H.
AU  - Waser, R.
TI  - Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films
JO  - Integrated ferroelectrics
VL  - 39
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-25913
SP  - 289
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000173066800022
UR  - https://juser.fz-juelich.de/record/25913
ER  -