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@ARTICLE{Bachhofer:25913,
      author       = {Bachhofer, H. and Reisinger, H. and Steinlesberger, G. and
                      Nagel, W. E. and Cerva, H. and von Philipsborn, H. and
                      Schroeder, H. and Waser, R.},
      title        = {{I}nterfacial layers and their effect on leakage current in
                      {MOCVD}-deposited {SBT} thin films},
      journal      = {Integrated ferroelectrics},
      volume       = {39},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-25913},
      pages        = {289},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Strontium bismuth tantalate (SBT) thin films were deposited
                      on Pt/Ti electrodes by metalorganic chemical vapor
                      deposition (MOCVD). Interactions at the interface of Pt and
                      SBT and their effect on leakage current were investigated.
                      High-resolution transmission electron micrographs (HRTEM)
                      reveal that after annealing at 700degreesC, a 1-2 nm thick
                      interfacial layer built. Auger electron spectra (AES)
                      confirm that the constituents of SBT intermix with the Pt
                      and vice versa. Schottky emission yields a nice linear fit
                      to the leakage current data but the extracted values of the
                      optical dielectric constant and the Richardson constant do
                      not meet experimental values. Taking into account an
                      interfacial layer with low dielectric constant and the
                      effect of diffusion on the Schottky emission these
                      inconsistencies can be resolved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000173066800022},
      url          = {https://juser.fz-juelich.de/record/25913},
}