001     25913
005     20180210140724.0
024 7 _ |2 WOS
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037 _ _ |a PreJuSER-25913
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Bachhofer, H.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2002
300 _ _ |a 289
336 7 _ |a Journal Article
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336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Integrated Ferroelectrics
|x 1058-4587
|0 2659
|v 39
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Strontium bismuth tantalate (SBT) thin films were deposited on Pt/Ti electrodes by metalorganic chemical vapor deposition (MOCVD). Interactions at the interface of Pt and SBT and their effect on leakage current were investigated. High-resolution transmission electron micrographs (HRTEM) reveal that after annealing at 700degreesC, a 1-2 nm thick interfacial layer built. Auger electron spectra (AES) confirm that the constituents of SBT intermix with the Pt and vice versa. Schottky emission yields a nice linear fit to the leakage current data but the extracted values of the optical dielectric constant and the Richardson constant do not meet experimental values. Taking into account an interfacial layer with low dielectric constant and the effect of diffusion on the Schottky emission these inconsistencies can be resolved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a ferroelectrics
653 2 0 |2 Author
|a SBT
653 2 0 |2 Author
|a interfacial layer
653 2 0 |2 Author
|a leakage current
700 1 _ |a Reisinger, H.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Steinlesberger, G.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Nagel, W. E.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Cerva, H.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a von Philipsborn, H.
|b 5
|0 P:(DE-HGF)0
700 1 _ |a Schroeder, H.
|b 6
|u FZJ
|0 P:(DE-Juel1)VDB3130
700 1 _ |a Waser, R.
|b 7
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |g Vol. 39, p. 289
|p 289
|q 39<289
|0 PERI:(DE-600)2037916-X
|t Integrated ferroelectrics
|v 39
|y 2002
|x 1058-4587
909 C O |o oai:juser.fz-juelich.de:25913
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)17299
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
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980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


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