TY  - JOUR
AU  - Schneller, T.
AU  - Waser, R.
TI  - Chemical solution deposition of ferroelectric thin films - state-of-the-art and recent trends
JO  - Ferroelectrics
VL  - 267
SN  - 0015-0193
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-25957
SP  - 293 - 301
PY  - 2002
N1  - Record converted from VDB: 12.11.2012
AB  - Chemical deposition methods include a wide spectrum of techniques ranging from chemical solution deposition (CSD) to Metal-Organic Chemical Vapor Deposition (MOCVD). After the short description of the complementary aspects, this review will focus on CSD summarizing the state of the art of the method for high-permittivity, ferroelectric, and other complex electronic oxide thin films. Aspects of the selection and the properties of the educts, the microscopic mechanism of the film deposition, and the tailoring of the microstructure by the deposition parameters will be discussed, due to their significant influence on the final film quality. To demonstrate the versatility and the potential of the CSD method, recent hot topics like the deposition of ultrathin films, lateral nanostructering, and the formation of single grains will be specifically discussed.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000176861100033
DO  - DOI:10.1080/00150190210989
UR  - https://juser.fz-juelich.de/record/25957
ER  -