Journal Article

PreJuSER-25957

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Chemical solution deposition of ferroelectric thin films - state-of-the-art and recent trends

Schneller, T. ; Waser, R.FZJ*

2002
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/00150190210989

Abstract: Chemical deposition methods include a wide spectrum of techniques ranging from chemical solution deposition (CSD) to Metal-Organic Chemical Vapor Deposition (MOCVD). After the short description of the complementary aspects, this review will focus on CSD summarizing the state of the art of the method for high-permittivity, ferroelectric, and other complex electronic oxide thin films. Aspects of the selection and the properties of the educts, the microscopic mechanism of the film deposition, and the tailoring of the microstructure by the deposition parameters will be discussed, due to their significant influence on the final film quality. To demonstrate the versatility and the potential of the CSD method, recent hot topics like the deposition of ultrathin films, lateral nanostructering, and the formation of single grains will be specifically discussed.

Keyword(s): J ; Chemical Solution Deposition (auto) ; ultrathin films (auto) ; nanotechnology (auto) ; single grains (auto) ; ferroelectrics (auto) ; dielectrics (auto) ; microstructure (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002

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