%0 Journal Article
%A Hölbling, T.
%A Waser, R.
%T Simulation of the charge transport across grain boundaries in P-type SrTiO3 ceramics
%J Ferroelectrics
%V 268
%@ 0015-0193
%C London [u.a.]
%I Taylor & Francis
%M PreJuSER-25968
%P 215 - 220
%D 2002
%Z Record converted from VDB: 12.11.2012
%X A mathematical-physical model to describe the charge transport across grain boundaries (GBs) in p-type SrTiO3 ceramics under DC load was developed. The model structure consists of a 1-dimensional cross section through a ceramic scenario that is bounded by electrodes. After an initial electrostatic simulation a DC bias voltage step is applied. The evolution of the spatial profiles of electric potential, defect concentrations etc., and the current response are calculated. The results for the ceramic model structure confirm the experimentally observed Debye relaxation, and the characteristic dependence of long-term conductivity on the DC bias after space-charge polarization.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000176861500036
%R 10.1080/713715993
%U https://juser.fz-juelich.de/record/25968