Journal Article

PreJuSER-25968

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Simulation of the charge transport across grain boundaries in P-type SrTiO3 ceramics

Hölbling, T. ; Waser, R.FZJ*

2002
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/713715993

Abstract: A mathematical-physical model to describe the charge transport across grain boundaries (GBs) in p-type SrTiO3 ceramics under DC load was developed. The model structure consists of a 1-dimensional cross section through a ceramic scenario that is bounded by electrodes. After an initial electrostatic simulation a DC bias voltage step is applied. The evolution of the spatial profiles of electric potential, defect concentrations etc., and the current response are calculated. The results for the ceramic model structure confirm the experimentally observed Debye relaxation, and the characteristic dependence of long-term conductivity on the DC bias after space-charge polarization.

Keyword(s): J ; simulation (auto) ; grain boundary (auto) ; charge transport (auto) ; conductivity (auto) ; ceramics (auto) ; SrTiO3 (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektrokeramische Materialien (IFF-EKM)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002

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