001     25968
005     20180210124651.0
024 7 _ |2 DOI
|a 10.1080/713715993
024 7 _ |2 WOS
|a WOS:000176861500036
037 _ _ |a PreJuSER-25968
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Hölbling, T.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Simulation of the charge transport across grain boundaries in P-type SrTiO3 ceramics
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2002
300 _ _ |a 215 - 220
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Ferroelectrics
|x 0015-0193
|0 2058
|v 268
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a A mathematical-physical model to describe the charge transport across grain boundaries (GBs) in p-type SrTiO3 ceramics under DC load was developed. The model structure consists of a 1-dimensional cross section through a ceramic scenario that is bounded by electrodes. After an initial electrostatic simulation a DC bias voltage step is applied. The evolution of the spatial profiles of electric potential, defect concentrations etc., and the current response are calculated. The results for the ceramic model structure confirm the experimentally observed Debye relaxation, and the characteristic dependence of long-term conductivity on the DC bias after space-charge polarization.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a simulation
653 2 0 |2 Author
|a grain boundary
653 2 0 |2 Author
|a charge transport
653 2 0 |2 Author
|a conductivity
653 2 0 |2 Author
|a ceramics
653 2 0 |2 Author
|a SrTiO3
700 1 _ |a Waser, R.
|b 1
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1080/713715993
|g Vol. 268, p. 215 - 220
|p 215 - 220
|q 268<215 - 220
|0 PERI:(DE-600)2042895-9
|t Ferroelectrics
|v 268
|y 2002
|x 0015-0193
909 C O |o oai:juser.fz-juelich.de:25968
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)17365
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


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