%0 Journal Article
%A Richter, S.
%A Sandow, C.
%A Nichau, A.
%A Trellenkamp, S.
%A Schmidt, M.
%A Luptak, R.
%A Bourdelle, K. K.
%A Zhao, Q. T.
%A Mantl, S.
%T Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs
%J IEEE electron device letters
%V 33
%N 11
%@ 1558-0563
%C New York, NY
%I IEEE
%M FZJ-2015-06710
%P 1535 - 1537
%D 2012
%X This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000310387100008
%R 10.1109/LED.2012.2213573
%U https://juser.fz-juelich.de/record/276247