Journal Article

FZJ-2015-06710

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

Richter, S. (Corresponding author)FZJ* ; Sandow, C. ; Nichau, A.FZJ* ; Trellenkamp, S.PGI-8-PT* ; Schmidt, M. ; Luptak, R. ; Bourdelle, K. K. ; Zhao, Q. T.FZJ* ; Mantl, S.FZJ*

2012
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2012.2213573

Abstract: This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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