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000276247 1001_ $$0P:(DE-HGF)0$$aRichter, S.$$b0$$eCorresponding author
000276247 245__ $$aOmega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs
000276247 260__ $$aNew York, NY$$bIEEE$$c2012
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000276247 520__ $$aThis letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.
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000276247 7001_ $$0P:(DE-HGF)0$$aSandow, C.$$b1
000276247 7001_ $$0P:(DE-HGF)0$$aNichau, A.$$b2
000276247 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, S.$$b3
000276247 7001_ $$0P:(DE-HGF)0$$aSchmidt, M.$$b4
000276247 7001_ $$0P:(DE-HGF)0$$aLuptak, R.$$b5
000276247 7001_ $$0P:(DE-HGF)0$$aBourdelle, K. K.$$b6
000276247 7001_ $$0P:(DE-Juel1)128649$$aZhao, Q. T.$$b7$$ufzj
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