TY  - JOUR
AU  - Richter, S.
AU  - Sandow, C.
AU  - Nichau, A.
AU  - Trellenkamp, S.
AU  - Schmidt, M.
AU  - Luptak, R.
AU  - Bourdelle, K. K.
AU  - Zhao, Q. T.
AU  - Mantl, S.
TI  - Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs
JO  - IEEE electron device letters
VL  - 33
IS  - 11
SN  - 1558-0563
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2015-06710
SP  - 1535 - 1537
PY  - 2012
AB  - This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000310387100008
DO  - DOI:10.1109/LED.2012.2213573
UR  - https://juser.fz-juelich.de/record/276247
ER  -