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@ARTICLE{Richter:276247,
author = {Richter, S. and Sandow, C. and Nichau, A. and Trellenkamp,
S. and Schmidt, M. and Luptak, R. and Bourdelle, K. K. and
Zhao, Q. T. and Mantl, S.},
title = {{O}mega-{G}ated {S}ilicon and {S}trained {S}ilicon
{N}anowire {A}rray {T}unneling {FET}s},
journal = {IEEE electron device letters},
volume = {33},
number = {11},
issn = {1558-0563},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2015-06710},
pages = {1535 - 1537},
year = {2012},
abstract = {This letter presents experimental results on tunneling
field-effect transistors featuring arrays of Ω-gated
uniaxially strained and unstrained silicon nanowires. The
gate control of a SiO2/poly-Si gate stack is compared with a
high-k/metal gate stack. Steep inverse subthreshold slopes
down to 76 mV/dec and relatively high on-currents were
achieved with the combination of high-k/metal gate and
strained silicon nanowires. We observed negative
differential conductance in the output characteristics,
which we attribute to hot-carrier effects in the strong
electric fields at the reverse-biased tunnel junction.},
cin = {PGI-9},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000310387100008},
doi = {10.1109/LED.2012.2213573},
url = {https://juser.fz-juelich.de/record/276247},
}