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| 001 | 276247 | ||
| 005 | 20210129220825.0 | ||
| 024 | 7 | _ | |a 10.1109/LED.2012.2213573 |2 doi |
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| 100 | 1 | _ | |a Richter, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs |
| 260 | _ | _ | |a New York, NY |c 2012 |b IEEE |
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| 520 | _ | _ | |a This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO2/poly-Si gate stack is compared with a high-k/metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high-k/metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction. |
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| 773 | _ | _ | |a 10.1109/LED.2012.2213573 |g Vol. 33, no. 11, p. 1535 - 1537 |0 PERI:(DE-600)2034325-5 |n 11 |p 1535 - 1537 |t IEEE electron device letters |v 33 |y 2012 |x 1558-0563 |
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