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@ARTICLE{Blmers:276251,
author = {Blömers, Ch. and Lu, J. G. and Huang, L. and Witte, C. and
Grützmacher, D. and Lüth, H. and Schäpers, Th.},
title = {{E}lectronic {T}ransport with {D}ielectric {C}onfinement in
{D}egenerate {I}n{N} {N}anowires},
journal = {Nano letters},
volume = {12},
number = {6},
issn = {1530-6992},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2015-06714},
pages = {2768 - 2772},
year = {2012},
abstract = {In this Letter, we present the size effects on charge
conduction in InN nanowires by comprehensive transport
studies supported by theoretical analysis. A consistent
model for highly degenerate narrow gap semiconductor
nanowires is developed. In contrast to common knowledge of
InN, there is no evidence of an enhanced surface conduction,
however, high intrinsic doping exists. Furthermore, the
room-temperature resistivity exhibits a strong increase when
the lateral size becomes smaller than 80 nm and the
temperature dependence changes from metallic to
semiconductor-like. This effect is modeled by donor
deactivation due to dielectric confinement, yielding a shift
of the donor band to higher ionization energies as the size
shrinks.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000305106400020},
doi = {10.1021/nl204500r},
url = {https://juser.fz-juelich.de/record/276251},
}