Journal Article

FZJ-2015-06714

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires

Blömers, C. (Corresponding author)FZJ* ; Lu, J. G.FZJ* ; Huang, L. ; Witte, C. ; Grützmacher, D.FZJ* ; Lüth, H.FZJ* ; Schäpers, T.FZJ*

2012
ACS Publ. Washington, DC

This record in other databases:  

Please use a persistent id in citations: doi:10.1021/nl204500r

Abstract: In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.

---

Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

---

Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---