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| 001 | 276251 | ||
| 005 | 20210129220826.0 | ||
| 024 | 7 | _ | |a 10.1021/nl204500r |2 doi |
| 024 | 7 | _ | |a 1530-6984 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-06714 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Blömers, Ch. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Electronic Transport with Dielectric Confinement in Degenerate InN Nanowires |
| 260 | _ | _ | |a Washington, DC |c 2012 |b ACS Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1448437088_32100 |2 PUB:(DE-HGF) |
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| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks. |
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| 700 | 1 | _ | |a Lu, J. G. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Huang, L. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Witte, C. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Grützmacher, D. |0 P:(DE-Juel1)125588 |b 4 |
| 700 | 1 | _ | |a Lüth, H. |0 P:(DE-Juel1)128608 |b 5 |
| 700 | 1 | _ | |a Schäpers, Th. |0 P:(DE-Juel1)128634 |b 6 |
| 773 | _ | _ | |a 10.1021/nl204500r |g Vol. 12, no. 6, p. 2768 - 2772 |0 PERI:(DE-600)2048866-X |n 6 |p 2768 - 2772 |t Nano letters |v 12 |y 2012 |x 1530-6992 |
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