Journal Article

FZJ-2015-06892

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tuning of the open-circuit voltage by wide band-gap absorber and doped layers in thin film silicon solar cells

Wang, S. (Corresponding author)FZJ* ; Smirnov, V.FZJ* ; Chen, T. ; Zhang, X. ; Xiong, S. ; Zhao, Y. ; Finger, F.FZJ*

2015
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssr.201510148

Abstract: We present an experimental study combined with computer simulations on the effects of wide band-gap absorber and window layers on the open-circuit voltage (Voc) in single junction thin film silicon solar cells. The quantity ΔEp, taking as the difference between the band gap and the activation energy in ⟨p⟩ layer, is treated as a measure of the p-layer properties and shows a linear relation with Voc over a range of 100 mV with a positive slope of around 430 mV/eV. Two limiting mechanisms of Voc are identified: the built-in potential at lower ΔEp and the band gap of the absorber layer at higher ΔEp. The results of the experimental findings are confirmed by computer simulations.

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

Appears in the scientific report 2015

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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