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000279266 1001_ $$0P:(DE-HGF)0$$aWouters, Dirk J.$$b0$$eCorresponding author
000279266 245__ $$aPhase-Change and Redox-Based Resistive Switching Memories
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000279266 520__ $$aThis paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed
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000279266 7001_ $$0P:(DE-HGF)0$$aWuttig, Matthias$$b2
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