TY  - JOUR
AU  - Nielen, Lutz
AU  - Siemon, Anne
AU  - Tappertzhofen, Stefan
AU  - Waser, R.
AU  - Menzel, Stephan
AU  - Linn, Eike
TI  - Study of Memristive Associative Capacitive Networks for CAM Applications
JO  - IEEE journal on emerging and selected topics in circuits and systems
VL  - 5
IS  - 2
SN  - 2156-3357
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2015-07284
SP  - 153 - 161
PY  - 2015
AB  - Resistively switching devices are key enabler for future hybrid CMOS/nano-crossbar array architectures. Due to the availability of nonvolatile states novel reconfigurable in-memory computing approaches become feasible. In particular complementary resistive switches are highly attractive cross-point junction elements due to their inherent sneak path prevention. By applying a nondestructive capacitive readout procedure the complementary resistive switches implement reconfigurable associative capacitive networks. Those networks establish the functionality of content addressable memories and enable memory intensive computing operations for realization of pattern recognition tasks. These are essential for router or network switch applications. In this study a highly accurate physics-based dynamical memristive device model is used to evaluate the network properties for various configurations. The high ON-to-OFF ratio of electrochemical metallization cells beneficially supports the functionality of the network. The voltage margin and energy consumption are analyzed for various crossbar array sizes. Moreover, a test setup to study those networks supported by measurements was developed and proof-of-concept results for a pre-programmed capacitive array are presented.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000356166200005
DO  - DOI:10.1109/JETCAS.2015.2426491
UR  - https://juser.fz-juelich.de/record/279269
ER  -