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@ARTICLE{Nielen:279269,
      author       = {Nielen, Lutz and Siemon, Anne and Tappertzhofen, Stefan and
                      Waser, R. and Menzel, Stephan and Linn, Eike},
      title        = {{S}tudy of {M}emristive {A}ssociative {C}apacitive
                      {N}etworks for {CAM} {A}pplications},
      journal      = {IEEE journal on emerging and selected topics in circuits
                      and systems},
      volume       = {5},
      number       = {2},
      issn         = {2156-3357},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2015-07284},
      pages        = {153 - 161},
      year         = {2015},
      abstract     = {Resistively switching devices are key enabler for future
                      hybrid CMOS/nano-crossbar array architectures. Due to the
                      availability of nonvolatile states novel reconfigurable
                      in-memory computing approaches become feasible. In
                      particular complementary resistive switches are highly
                      attractive cross-point junction elements due to their
                      inherent sneak path prevention. By applying a nondestructive
                      capacitive readout procedure the complementary resistive
                      switches implement reconfigurable associative capacitive
                      networks. Those networks establish the functionality of
                      content addressable memories and enable memory intensive
                      computing operations for realization of pattern recognition
                      tasks. These are essential for router or network switch
                      applications. In this study a highly accurate physics-based
                      dynamical memristive device model is used to evaluate the
                      network properties for various configurations. The high
                      ON-to-OFF ratio of electrochemical metallization cells
                      beneficially supports the functionality of the network. The
                      voltage margin and energy consumption are analyzed for
                      various crossbar array sizes. Moreover, a test setup to
                      study those networks supported by measurements was developed
                      and proof-of-concept results for a pre-programmed capacitive
                      array are presented.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000356166200005},
      doi          = {10.1109/JETCAS.2015.2426491},
      url          = {https://juser.fz-juelich.de/record/279269},
}