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@ARTICLE{Fink:279314,
      author       = {Fink, T. and Muthmann, S. and Mück, A. and Gordijn, A. and
                      Carius, R. and Meier, Matthias},
      title        = {{I}nterplay between crystallinity profiles and the
                      performance of microcrystalline thin-film silicon solar
                      cells studied by in-situ {R}aman spectroscopy},
      journal      = {Journal of applied physics},
      volume       = {118},
      number       = {21},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2015-07329},
      pages        = {215304 -},
      year         = {2015},
      abstract     = {The intrinsic microcrystalline absorber layer growth in
                      thin-filmsilicon solar-cells is investigated by in-situ
                      Raman spectroscopy during plasma enhanced chemical vapor
                      deposition. In-situ Raman spectroscopy enables a detailed
                      study of the correlation between the process settings, the
                      evolution of the Raman crystallinity in growth direction,
                      and the photovoltaic parameters η(solar cell conversion
                      efficiency), JSC (short circuit current density), FF (fill
                      factor), and VOC (open circuit voltage). Raman spectra were
                      taken every 7 nm of the absorber layer growth depending on
                      the process settings. The Raman crystallinity of growing
                      microcrystalline silicon was determined with an absolute
                      error of approximately $±5\%$ for total absorber layer
                      thicknesses >50 nm. Due to this high accuracy, inherent
                      drifts of the Raman crystallinity profiles are resolvable
                      for almost the entire absorber layer deposition. For
                      constant process settings and optimized solar celldevice
                      efficiency Raman crystallinity increases during the absorber
                      layer growth. To compensate the inhomogeneous absorber layer
                      growth process settings were adjusted. As a result, absorber
                      layers with a constant Raman crystallinity profile — as
                      observed in-situ — were deposited.Solar cells with those
                      absorber layers show a strongly enhanced conversion
                      efficiency by $∼0.5\%$ absolute. However, the highest FF,
                      VOC, and JSC were detected for solar cells with different
                      Raman crystallinity profiles. In particular, fill factors of
                      $74.5\%$ were observed for solar cells with decreasing Raman
                      crystallinity during the later absorber layer growth. In
                      contrast, intrinsic layers with favorable JSC are obtained
                      for constant and increasing Raman crystallinity profiles.
                      Therefore, monitoring the evolution of the Raman
                      crystallinity in-situ provides sufficient information for an
                      optimization of the photovoltaic parameters with surpassing
                      depth resolution.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000369918100034},
      doi          = {10.1063/1.4936616},
      url          = {https://juser.fz-juelich.de/record/279314},
}