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000279870 1001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b0$$eCorresponding author$$ufzj
000279870 245__ $$aSimultaneous Integration of Different Nanowires on Single Textured Si (100) Substrates
000279870 260__ $$aWashington, DC$$bACS Publ.$$c2015
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000279870 520__ $$aBy applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III–V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.
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000279870 7001_ $$0P:(DE-Juel1)167347$$aRosenbach, Daniel$$b1$$ufzj
000279870 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b2$$ufzj
000279870 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b3$$ufzj
000279870 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b4$$ufzj
000279870 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b5$$ufzj
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