Journal Article

FZJ-2015-07746

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Simultaneous Integration of Different Nanowires on Single Textured Si (100) Substrates

Rieger, T. (Corresponding author)FZJ* ; Rosenbach, D.FZJ* ; Mussler, G.FZJ* ; Schäpers, T.FZJ* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2015
ACS Publ. Washington, DC

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Please use a persistent id in citations: doi:10.1021/nl504854v

Abstract: By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III–V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 10 ; JCR ; NCBI Molecular Biology Database ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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