TY  - JOUR
AU  - Rieger, Torsten
AU  - Rosenbach, Daniel
AU  - Mussler, Gregor
AU  - Schäpers, Thomas
AU  - Grützmacher, Detlev
AU  - Lepsa, Mihail Ion
TI  - Simultaneous Integration of Different Nanowires on Single Textured Si (100) Substrates
JO  - Nano letters
VL  - 15
IS  - 3
SN  - 1530-6992
CY  - Washington, DC
PB  - ACS Publ.
M1  - FZJ-2015-07746
SP  - 1979 - 1986
PY  - 2015
AB  - By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III–V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000351188000081
C6  - pmid:25650521
DO  - DOI:10.1021/nl504854v
UR  - https://juser.fz-juelich.de/record/279870
ER  -