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@ARTICLE{Rieger:279870,
author = {Rieger, Torsten and Rosenbach, Daniel and Mussler, Gregor
and Schäpers, Thomas and Grützmacher, Detlev and Lepsa,
Mihail Ion},
title = {{S}imultaneous {I}ntegration of {D}ifferent {N}anowires on
{S}ingle {T}extured {S}i (100) {S}ubstrates},
journal = {Nano letters},
volume = {15},
number = {3},
issn = {1530-6992},
address = {Washington, DC},
publisher = {ACS Publ.},
reportid = {FZJ-2015-07746},
pages = {1979 - 1986},
year = {2015},
abstract = {By applying a texturing process to silicon substrates, we
demonstrate the possibility to integrate III–V nanowires
on (100) oriented silicon substrates. Nanowires are found to
grow perpendicular to the {111}-oriented facets of pyramids
formed by KOH etching. Having control of the substrate
orientation relative to the incoming fluxes enables not only
the growth of nanowires on selected facets of the pyramids
but also studying the influence of the fluxes on the
nanowire nucleation and growth. Making use of these
findings, we show that nanowires with different dimensions
can be grown on the same sample and, additionally, it is
even possible to integrate nanowires of different
semiconductor materials, for example, GaAs and InAs, on the
very same sample.},
cin = {PGI-9 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000351188000081},
pubmed = {pmid:25650521},
doi = {10.1021/nl504854v},
url = {https://juser.fz-juelich.de/record/279870},
}