Conference Presentation (Invited)

FZJ-2015-07750

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Towards III-nitride nano-LED based single photon emitters: technology and applications

Hardtdegen, H. (Corresponding author) ; Mikulics, M.FZJ*

2015

Abstract: Single photon emitters based on InGaN nano-LEDs (light emitting diodes) have the potential to operate at room temperature. They are therefore the key to enabling future low energy consumption, highly secure and ultrafast optoelectronics. Different technological concepts for emitting sources were developed and will be presented together with their realization. It will be discussed how their wavelength can be tuned for future applications.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
No Authors Fulltext

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