%0 Journal Article
%A Schulte-Braucks, Christian
%A Richter, Simon
%A Knoll, Lars
%A Selmi, Luca
%A Zhao, Qing-Tai
%A Mantl, Siegfried
%T Experimental demonstration of improved analog device performance of nanowire-TFETs
%J Solid state electronics
%V 113
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M FZJ-2015-07822
%P 179 - 183
%D 2015
%X We present experimental data on analog device performance of p-type planar- and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameters of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-currents up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a good output current-saturation is observed leading to high intrinsic gain up to 217. The Tri-Gate nTFETs beat the fundamental MOSFET limit for the subthreshold slope of 60 mV/dec and by that also reach extremely high transconductance efficiencies up to 82 V−1.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000359170600029
%R 10.1016/j.sse.2015.05.032
%U https://juser.fz-juelich.de/record/280075