Journal Article

FZJ-2015-07822

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Experimental demonstration of improved analog device performance of nanowire-TFETs

Schulte-Braucks, C. (Corresponding author)FZJ* ; Richter, S.FZJ* ; Knoll, L.FZJ* ; Selmi, L. ; Zhao, Q.-T.FZJ* ; Mantl, S.FZJ*

2015
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2015.05.032

Abstract: We present experimental data on analog device performance of p-type planar- and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameters of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-currents up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a good output current-saturation is observed leading to high intrinsic gain up to 217. The Tri-Gate nTFETs beat the fundamental MOSFET limit for the subthreshold slope of 60 mV/dec and by that also reach extremely high transconductance efficiencies up to 82 V−1.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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