TY  - JOUR
AU  - Schulte-Braucks, Christian
AU  - Richter, Simon
AU  - Knoll, Lars
AU  - Selmi, Luca
AU  - Zhao, Qing-Tai
AU  - Mantl, Siegfried
TI  - Experimental demonstration of improved analog device performance of nanowire-TFETs
JO  - Solid state electronics
VL  - 113
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2015-07822
SP  - 179 - 183
PY  - 2015
AB  - We present experimental data on analog device performance of p-type planar- and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameters of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-currents up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a good output current-saturation is observed leading to high intrinsic gain up to 217. The Tri-Gate nTFETs beat the fundamental MOSFET limit for the subthreshold slope of 60 mV/dec and by that also reach extremely high transconductance efficiencies up to 82 V−1.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000359170600029
DO  - DOI:10.1016/j.sse.2015.05.032
UR  - https://juser.fz-juelich.de/record/280075
ER  -