% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{SchulteBraucks:280075,
      author       = {Schulte-Braucks, Christian and Richter, Simon and Knoll,
                      Lars and Selmi, Luca and Zhao, Qing-Tai and Mantl,
                      Siegfried},
      title        = {{E}xperimental demonstration of improved analog device
                      performance of nanowire-{TFET}s},
      journal      = {Solid state electronics},
      volume       = {113},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2015-07822},
      pages        = {179 - 183},
      year         = {2015},
      abstract     = {We present experimental data on analog device performance
                      of p-type planar- and gate all around (GAA) nanowire (NW)
                      Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A
                      significant improvement of the analog performance by
                      enhancing the electrostatics from planar TFETs to
                      GAA-NW-TFETs with diameters of 20 nm and 10 nm is
                      demonstrated. A maximum transconductance of 122 μS/μm and
                      on-currents up to 23 μA/μm at a gate overdrive of Vgt = Vd
                      = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a
                      good output current-saturation is observed leading to high
                      intrinsic gain up to 217. The Tri-Gate nTFETs beat the
                      fundamental MOSFET limit for the subthreshold slope of 60
                      mV/dec and by that also reach extremely high
                      transconductance efficiencies up to 82 V−1.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000359170600029},
      doi          = {10.1016/j.sse.2015.05.032},
      url          = {https://juser.fz-juelich.de/record/280075},
}