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| 001 | 280075 | ||
| 005 | 20210129221210.0 | ||
| 024 | 7 | _ | |a 10.1016/j.sse.2015.05.032 |2 doi |
| 024 | 7 | _ | |a 0038-1101 |2 ISSN |
| 024 | 7 | _ | |a 1879-2405 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-07822 |
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| 100 | 1 | _ | |a Schulte-Braucks, Christian |0 P:(DE-Juel1)161530 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Experimental demonstration of improved analog device performance of nanowire-TFETs |
| 260 | _ | _ | |a Oxford [u.a.] |c 2015 |b Pergamon, Elsevier Science |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1452698420_2868 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a We present experimental data on analog device performance of p-type planar- and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs) as well as on n-type Tri-Gate-TFETs. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameters of 20 nm and 10 nm is demonstrated. A maximum transconductance of 122 μS/μm and on-currents up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1 V were achieved for the GAA NW-pTFETs. Furthermore, a good output current-saturation is observed leading to high intrinsic gain up to 217. The Tri-Gate nTFETs beat the fundamental MOSFET limit for the subthreshold slope of 60 mV/dec and by that also reach extremely high transconductance efficiencies up to 82 V−1. |
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| 700 | 1 | _ | |a Richter, Simon |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Knoll, Lars |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Selmi, Luca |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 4 |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 5 |
| 773 | _ | _ | |a 10.1016/j.sse.2015.05.032 |g Vol. 113, p. 179 - 183 |0 PERI:(DE-600)2012825-3 |p 179 - 183 |t Solid state electronics |v 113 |y 2015 |x 0038-1101 |
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