000280081 001__ 280081
000280081 005__ 20210129221212.0
000280081 037__ $$aFZJ-2015-07828
000280081 041__ $$aEnglish
000280081 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author
000280081 1112_ $$aSemiconductor Interface Specialist Conference$$cArlington$$d2015-12-02 - 2015-12-05$$gSISC 2015$$wUSA
000280081 245__ $$aInvestigation of ternary SiGeSn MOS structures
000280081 260__ $$c2015
000280081 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1452684543_2862$$xOther
000280081 3367_ $$033$$2EndNote$$aConference Paper
000280081 3367_ $$2DataCite$$aOther
000280081 3367_ $$2ORCID$$aLECTURE_SPEECH
000280081 3367_ $$2DRIVER$$aconferenceObject
000280081 3367_ $$2BibTeX$$aINPROCEEDINGS
000280081 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000280081 536__ $$0G:(EU-Grant)619509$$aE2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)$$c619509$$fFP7-ICT-2013-11$$x1
000280081 7001_ $$0P:(DE-HGF)0$$aLehndorff, Thomas$$b1
000280081 7001_ $$0P:(DE-Juel1)165997$$aGlass, Stefan$$b2
000280081 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b3
000280081 7001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b4
000280081 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b5
000280081 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b6
000280081 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b7
000280081 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b8
000280081 909CO $$ooai:juser.fz-juelich.de:280081$$pec_fundedresources$$pVDB$$popenaire
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-HGF)0$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165997$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138778$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000280081 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000280081 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000280081 9141_ $$y2015
000280081 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000280081 920__ $$lyes
000280081 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000280081 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000280081 980__ $$aconf
000280081 980__ $$aVDB
000280081 980__ $$aUNRESTRICTED
000280081 980__ $$aI:(DE-Juel1)PGI-9-20110106
000280081 980__ $$aI:(DE-82)080009_20140620