Conference Presentation (Other) FZJ-2015-07828

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Investigation of ternary SiGeSn MOS structures

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2015

Semiconductor Interface Specialist Conference, SISC 2015, ArlingtonArlington, USA, 2 Dec 2015 - 5 Dec 20152015-12-022015-12-05


Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
  2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2015
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 Record created 2015-12-21, last modified 2021-01-29



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