Journal Article

FZJ-2016-00152

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png GaN heterostructures with diamond and graphene

Pécz, B. (Corresponding author) ; Tóth, L. ; Tsiakatouras, G. ; Adikimenakis, A. ; Kovács, A.FZJ* ; Duchamp, M.FZJ* ; Dunin-Borkowski, R.FZJ* ; Yakimova, R. ; Neumann, P. L. ; Behmenburg, H. ; Foltynski, B. ; Giesen, C. ; Heuken, M. ; Georgakilas, A.

2015
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0268-1242/30/11/114001

Abstract: The full performance of GaN devices for high power applications is not exploited due to their self-heating. Possible solutions are the integration of materials with high heat conductivity i.e., single crystalline diamond and graphene layers. We report the growth of single crystalline (0001)-oriented GaN thin films on (100), (110) and (111) diamond single crystals studied by transmission electron microscopy (TEM) in cross-sections. As for graphene, we show a high quality GaN layer that was deposited on patterned graphene layers and 6H-SiC. The atomic structures of the interfaces in the heterostructure are studied using aberration-corrected scanning TEM combined with energy dispersive x-ray and electron energy-loss spectroscopy.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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