%0 Journal Article
%A Strauß, Florian
%A Dörrer, Lars
%A Geue, Thomas
%A Stahn, Jochen
%A Koutsioumpas, Alexandros
%A Mattauch, Stefan
%A Schmidt, Harald
%T Self-Diffusion in Amorphous Silicon
%J Physical review letters
%V 116
%N 2
%@ 1079-7114
%C College Park, Md.
%I APS
%M FZJ-2016-00459
%P 025901
%D 2016
%Z fehlende Daten von Koutsioumpas/Mattauch angefordert
%X The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000368281600006
%R 10.1103/PhysRevLett.116.025901
%U https://juser.fz-juelich.de/record/280702