Journal Article FZJ-2016-00459

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Self-Diffusion in Amorphous Silicon

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2016
APS College Park, Md.

Physical review letters 116(2), 025901 () [10.1103/PhysRevLett.116.025901]

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Abstract: The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.

Keyword(s): Energy (1st) ; Condensed Matter Physics (2nd)

Classification:

Note: fehlende Daten von Koutsioumpas/Mattauch angefordert

Contributing Institute(s):
  1. JCNS-FRM-II (JCNS (München) ; Jülich Centre for Neutron Science JCNS (München) ; JCNS-FRM-II)
  2. Streumethoden (JCNS-2)
  3. Streumethoden (PGI-4)
  4. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 6G15 - FRM II / MLZ (POF3-6G15) (POF3-6G15)
  2. 6G4 - Jülich Centre for Neutron Research (JCNS) (POF3-623) (POF3-623)
Experiment(s):
  1. MARIA: Magnetic reflectometer with high incident angle (NL5N)

Appears in the scientific report 2016
Database coverage:
Medline ; OpenAccess ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Document types > Articles > Journal Article
Institute Collections > JCNS > JCNS-2
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-4
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 Record created 2016-01-14, last modified 2025-01-29


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