Home > Workflow collections > Public records > Self-Diffusion in Amorphous Silicon |
Journal Article | FZJ-2016-00459 |
; ; ; ; ; ;
2016
APS
College Park, Md.
This record in other databases:
Please use a persistent id in citations: http://hdl.handle.net/2128/9806 doi:10.1103/PhysRevLett.116.025901
Abstract: The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3) eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.
Keyword(s): Energy (1st) ; Condensed Matter Physics (2nd)
![]() |
The record appears in these collections: |