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000280702 1001_ $$0P:(DE-HGF)0$$aStrauß, Florian$$b0$$eCorresponding author
000280702 245__ $$aSelf-Diffusion in Amorphous Silicon
000280702 260__ $$aCollege Park, Md.$$bAPS$$c2016
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000280702 520__ $$aThe present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.
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000280702 7001_ $$0P:(DE-HGF)0$$aDörrer, Lars$$b1
000280702 7001_ $$0P:(DE-HGF)0$$aGeue, Thomas$$b2
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