TY  - JOUR
AU  - Strauß, Florian
AU  - Dörrer, Lars
AU  - Geue, Thomas
AU  - Stahn, Jochen
AU  - Koutsioumpas, Alexandros
AU  - Mattauch, Stefan
AU  - Schmidt, Harald
TI  - Self-Diffusion in Amorphous Silicon
JO  - Physical review letters
VL  - 116
IS  - 2
SN  - 1079-7114
CY  - College Park, Md.
PB  - APS
M1  - FZJ-2016-00459
SP  - 025901
PY  - 2016
N1  - fehlende Daten von Koutsioumpas/Mattauch angefordert
AB  - The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000368281600006
DO  - DOI:10.1103/PhysRevLett.116.025901
UR  - https://juser.fz-juelich.de/record/280702
ER  -