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@ARTICLE{Strau:280702,
author = {Strauß, Florian and Dörrer, Lars and Geue, Thomas and
Stahn, Jochen and Koutsioumpas, Alexandros and Mattauch,
Stefan and Schmidt, Harald},
title = {{S}elf-{D}iffusion in {A}morphous {S}ilicon},
journal = {Physical review letters},
volume = {116},
number = {2},
issn = {1079-7114},
address = {College Park, Md.},
publisher = {APS},
reportid = {FZJ-2016-00459},
pages = {025901},
year = {2016},
note = {fehlende Daten von Koutsioumpas/Mattauch angefordert},
abstract = {The present Letter reports on self-diffusion in amorphous
silicon. Experiments were done on Si29/Sinat
heterostructures using neutron reflectometry and secondary
ion mass spectrometry. The diffusivities follow the
Arrhenius law in the temperature range between 550 and
700 °C with an activation energy of (4.4±0.3) eV.
In comparison with single crystalline silicon the
diffusivities are tremendously higher by 5 orders of
magnitude at about 700 °C, which can be interpreted as
the consequence of a high diffusion entropy.},
cin = {JCNS (München) ; Jülich Centre for Neutron Science JCNS
(München) ; JCNS-FRM-II / JCNS-2 / PGI-4 / JARA-FIT},
ddc = {550},
cid = {I:(DE-Juel1)JCNS-FRM-II-20110218 /
I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {6G15 - FRM II / MLZ (POF3-6G15) / 6G4 - Jülich Centre for
Neutron Research (JCNS) (POF3-623)},
pid = {G:(DE-HGF)POF3-6G15 / G:(DE-HGF)POF3-6G4},
experiment = {EXP:(DE-MLZ)MARIA-20140101},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000368281600006},
doi = {10.1103/PhysRevLett.116.025901},
url = {https://juser.fz-juelich.de/record/280702},
}