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024 7 _ |a 10.1103/PhysRevLett.116.025901
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024 7 _ |a 1079-7114
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041 _ _ |a English
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100 1 _ |a Strauß, Florian
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245 _ _ |a Self-Diffusion in Amorphous Silicon
260 _ _ |a College Park, Md.
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520 _ _ |a The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on Si29/Sinat heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy.
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700 1 _ |a Dörrer, Lars
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700 1 _ |a Geue, Thomas
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700 1 _ |a Stahn, Jochen
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700 1 _ |a Koutsioumpas, Alexandros
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700 1 _ |a Mattauch, Stefan
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700 1 _ |a Schmidt, Harald
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773 _ _ |a 10.1103/PhysRevLett.116.025901
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