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@ARTICLE{Zhong:280724,
      author       = {Zhong, Lianbing and Liu, Limeng and Worsch, Christian and
                      Gonzalez, Jesus and Springer, André and Ye, Feng},
      title        = {{T}ransient liquid phase sintering of tantalum carbide
                      ceramics by using silicon as the sintering aid and its
                      effects on microstructure and mechanical properties},
      journal      = {Materials chemistry and physics},
      volume       = {149-150},
      issn         = {0254-0584},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-00481},
      pages        = {505 - 511},
      year         = {2015},
      abstract     = {Tantalum carbide composites with 0.76–8.85 $wt.\%$
                      elemental silicon as a sintering aid were fabricated by
                      spark plasma sintering (SPS) at 1700 °C and 30 MPa for 5
                      min. The transient-liquid-phase sintering behavior, the
                      microstructures and the mechanical properties of the
                      tantalum carbide composites were investigated. Oxide
                      impurities present on the surfaces of the tantalum carbide
                      particles were eliminated by reactions with the elemental
                      silicon in a temperature range from 1271 °C to 1503 °C to
                      benefit densification. Then the silicon melted at its
                      melting point temperature of 1413 °C to facilitate
                      rearrangement of the tantalum carbide particles. By the end
                      of the densification, the elemental silicon transformed into
                      more refractory TaSi2 and SiC in the consolidated ceramics
                      by reactions with the tantalum carbide at temperatures lower
                      than 1773 °C. Both TaSi2 and SiC particles improved
                      densification by physically pinning growth of the tantalum
                      carbide grains. Further densification was resulted from
                      creep flow of the silicides after brittle-to-ductile
                      transformation of the silicides at temperatures <1650 °C.
                      Due to the good effects of using elemental silicon as the
                      sintering aid, all the compositions reached densities
                      $>96.7\%$ theoretical. The average grain sizes in the
                      consolidated materials decreased with the silicon addition
                      from about 19 μm in the 0.76 $wt.\%$ Si composition to
                      about 9 μm in the 8.85 $wt.\%$ Si composition. A good
                      flexural strength up to ∼709 MPa was reached in the 8.85
                      $wt.\%$ Si material due to full density and fine
                      microstructure.},
      cin          = {IEK-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-1-20101013},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000347576900070},
      doi          = {10.1016/j.matchemphys.2014.10.052},
      url          = {https://juser.fz-juelich.de/record/280724},
}