Journal Article

FZJ-2016-00593

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaO x Based Memristive Devices

Lübben, M.FZJ* ; Karakolis, P. ; Ioannou-Sougleridis, V. ; Normand, P. ; Dimitrakis, P. ; Valov, I. (Corresponding author)FZJ*

2015
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/adma.201502574

Abstract: By modification of the electrode–solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 15 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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