%0 Journal Article
%A Just, Sven
%A Blab, Marcus
%A Korte, Stefan
%A Cherepanov, Vasily
%A Soltner, Helmut
%A Voigtländer, Bert
%T Surface and Step Conductivities on Si(111) Surfaces
%J Physical review letters
%V 115
%N 6
%@ 1079-7114
%C College Park, Md.
%I APS
%M FZJ-2016-00629
%P 066801
%D 2015
%X Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as a function of the rotation angle. In total, this combined approach leads to an atomic step conductivity of σstep=(29±9)  Ω−1 m−1 and to a step-free surface conductivity of σsurf=(9±2)×10−6  Ω−1/□ for the Si(111)−(7×7) surface.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000358937600009
%R 10.1103/PhysRevLett.115.066801
%U https://juser.fz-juelich.de/record/280918